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| 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Preliminary Specifications Features: * High Gain: - Typically 27-28 dB gain across 2.4-2.5 GHz - Typically 30-34 dB gain across 4.9-5.8 GHz * High linear output power: - >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz - Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz - Meets 802.11g OFDM ACPR requirement up to 22 dBm across 2.4-2.5 GHz - Added EVM~4% up to 19 dBm for 54 Mbps 802.11g signal across 2.4-2.5 GHz - >25 dBm P1dB (Pulsed single-tone signal) across 4.9-5.8 GHz - Meets 802.11a OFDM ACPR requirement up to 22 dBm across 4.9-5.8GHz - Added EVM~4% up to 18 dBm for 54 Mbps 802.11a signal across 4.9-5.8GHz * High power-added efficiency/Low operating current for 802.11a/b/g applications - ~220 mA @ POUT = 22 dBm for 802.11g - ~205 mA @ POUT = 21.5 dBm for 802.11b - ~380 mA @ POUT = 22 dBm for 802.11a * Built-in Ultra-low IREF power-up/down control - IREF <2 mA * Low idle current - ~55 mA ICQ (802.11b/g) - ~135 mA ICQ (802.11a) * High-speed power-up/down - Turn on/off time (10%-90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * High temperature stability - ~2/1 dB gain/power variation between 0C to +85C across 2.4-2.5 GHz - ~8/2 dB gain/max linear power variation between 0C to +85C across 4.9-5.8 GHz - ~1 dB detector variation over 0C to +85C * Low shut-down current (< 0.1 A) * On-chip power detection * 20 dB dynamic range on-chip power detection * Simple input/output matching * Packages available - 24-lead WQFN (4mm x 4mm) - Non-Pb (lead-free) packages available Applications: * * * * * * WLAN (IEEE 802.11a/g/b) Japanese WLAN HyperLAN2 Multimedia Home RF Cordless phones Product Description The SST13LP02 is a high-efficiency, dual-band power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST13LP02 can be easily configured for high-power applications with superb power-added efficiency while operating over the 802.11a/b/g frequency band for U.S., European, and Japanese markets (2.4-2.5 GHz and 4.95.8 GHz). The SST13LP02 has excellent linearity, typically ~4% added EVM at 19 dBm output power, which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 22 dBm and 802.11b spectrum mask at 21.5 dBm. For 802.11a operation, the SST13LP02 has demonstrated typically ~4% added EVM at 18 dBm output power while meeting 802.11a spectrum mask at 22 dBm. The (c)2006 SST Communications Corp. S71304-01-000 9/06 1 SST13LP02 also has wide-range (>15 dB), temperaturestable (~1.5 dB over 85C), single-ended power detectors which lower users' cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultra-low reference current (total IREF <2 mA) makes the SST13LP02 controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST13LP02 ideal for the final stage power amplification in both batterypowered 802.11a/b/g WLAN transmitters and access point applications. The SST13LP02 is offered in a 24-contact WQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Functional Blocks VREF_LB VCC1_LB Det_LB NC NC 20 24 NC RFIN_LB GND GND RFIN_HB VREF_HB 1 2 3 4 5 6 HB Bias Circuit 23 22 21 19 18 17 16 15 14 13 RFOUT_LB GND GND RFOUT_HB RFOUT_HB RFOUT_HB LB Bias Circuit 7 VCC1_HB 8 NC 9 VCC2_HB 10 NC 11 NC 12 Det_HB 1304 B1.1 FIGURE 1: Functional Block Diagram (c)2006 SST Communications Corp. NC S71304-01-000 9/06 2 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Pin Assignments VREF_LB VCC1_LB Det_LB NC NC 20 24 NC RFIN_LB GND GND RFIN_HB VREF_HB 1 2 3 4 5 6 7 VCC1_HB 23 22 21 19 18 RFOUT_LB GND GND RFOUT_HB RFOUT_HB RFOUT_HB NC 17 16 15 14 13 12 Det_HB 1304 P1.1 Top View (contacts facing down) RF and DC GND 0 8 NC 9 VCC2_HB 10 NC 11 NC FIGURE 2: Pin Assignments for 16-contact WQFN (c)2006 SST Communications Corp. S71304-01-000 9/06 3 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Pin DescriptionS TABLE 1: Pin Description Symbol GND NC RFin_LB GND GND RFin_HB VREF_HB Vcc1_HB NC Vcc2_HB NC NC Det_HB RFout_HB RFout_HB RFout_HB GND GND RFout_LB NC NC Det_LB NC VREF_LB Vcc1_LB Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 No Connection Power Supply Power Supply PWR PWR Power Supply Power Supply Power Supply Ground Ground Power Supply No Connection No Connection O Power Supply Power Supply No Connection Power Supply No Connection No Connection O PWR Ground Ground I PWR PWR Pin Name Ground No Connection I Type Function Ground Pad Unconnected Pin RF Input for Low Band, DC decoupled Ground Pin Ground Pin RF Input for High Band, DC decoupled Idle Current Control for High Band Vcc Power Supply for High Band Unconnected Pin Vcc Power Supply for High Band Unconnected Pin Unconnected Pin Detector Voltage Output for High Band O/PWR RF Output/Vcc power supply for High Band O/PWR RF Output/Vcc power supply for High Band O/PWR RF Output/Vcc power supply for High Band Ground Pin Ground Pin O/PWR RF Output/Vcc power supply for Low Band Unconnected Pin Unconnected Pin Detector Voltage Output for Low Band Unconnected Pin Idle Current Control for Low Band Vcc Power Supply for Low Band T1.2 1304 (c)2006 SST Communications Corp. S71304-01-000 9/06 4 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Tables 2 and 4 for the DC voltage and current specifications. Refer to Figures 3 through 22 for the RF performance. Absolute Maximum Stress Ratings Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability. Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V Reference Voltage (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C (c)2006 SST Communications Corp. S71304-01-000 9/06 5 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications For 802.11b/g Operation TABLE 2: DC Electrical Characteristics Symbol VCC ICC Supply Voltage Supply Current for 802.11g, 22 dBm for 802.11b, 21.5 dBm ICQ IOFF VREG Idle current for 802.11g to meet EVM<4% @ 18 dBm Shut down current Reference Voltage with drop resistors 2.9 220 205 55 0.1 mA mA mA A V T2.1 1304 Parameter Min. 3.0 Typ 3.3 Max. 3.6 Unit V Test Conditions TABLE 3: AC Electrical Characteristics for Configuration Symbol FL-U G GVAR1 GVAR2 ACPR Parameter Frequency range Small signal gain Gain variation over band (2400-2485 MHz) Gain ripple over channel (20 MHz) Output power level meet 11b spectrum mask Output power level meet 11g OFDM 54 Mbps spectrum mask Added EVM 2f 3f ACPR1 ACPR2 Added EVM @ Pout = 19 dBm with (54 Mbps 11g OFDM) 2nd Harmonics at Pout=18 dBm (54 Mbps 11g OFDM) 3rd Harmonics at Pout=18 dBm (54 Mbps 11g OFDM) Adjacent Channel Power Rejection at Pout=18 dBm (54 Mbps 11g OFDM) Alt. Adjacent Channel Power Rejection at Pout=18 dBm (54 Mbps 11g OFDM) -45 -50 -35 -45 21 21 4 0.2 Min. 2400 25 0.5 Typ Max. 2485 Unit MHz dB dB dB dBm dBm % dBc dBc dBc dBc T3.1 1304 (c)2006 SST Communications Corp. S71304-01-000 9/06 6 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications For 802.11a Operation TABLE Symbol VCC ICC ICQ IOFF VREG Total IREG Supply Voltage Supply Current for 802.11a, 22 dBm at VCC = 3.3V Vcc quiescent current Shut down current Reference Voltage with drop resistors Total Reference Current 2.9 2 380 135 1.0 mA mA A V mA T4.1 1304 4: DC Electrical Characteristics Parameter Min. 3.0 Typ 3.3 Max. 3.6 Unit V TABLE 5: AC Electrical Characteristics for Configuration Symbol FL-U G GVAR Parameter Frequency range Small signal gain across 4.9~5.8GHz Gain variation over band (4.9-5.8 MHz) Gain variation over band (4.9-5.35 MHz) Gain variation over band (5.7-5.8 MHz) Gain variation over channel (20 MHz) Added EVM ACPR 2f 3f ACPR1 ACPR2 Added EVM @ Pout=18 dBm (54 Mbps 11a OFDM) Output power level with 802.11a mask compliance across 4.9-5.8 GHz 2nd Harmonics at Pout=18 dBm (54 Mbps 11a OFDM) 3rd Harmonics at Pout=18 dBm (54 Mbps 11a OFDM) Adjacent Channel Power Rejection at Pout=18 dBm (54 Mbps 11a OFDM) Alt. Adjacent Channel Power Rejection at Pout=18 dBm (54 Mbps 11a OFDM) 21 -45 -50 -35 -50 Min. 4920 26 5.0 1.0 1.0 0.2 4 Typ Max. 5805 Unit MHz dB dB dB dB dB % dBm dBc dBc dBc dBc T5.1 1304 (c)2006 SST Communications Corp. S71304-01-000 9/06 7 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Typical Low Band Performance for 802.11B/G TEST CONDITIONS: VCC = 3.3V, TA = 25C, VREF_LB = 2.9V UNLESS OTHERWISE NOTED S11 versus Frequency 0 -5 0 -10 -20 S12 versus Frequency S11 (dB) -10 -15 -20 -25 -30 0.0 S12 (dB) -30 -40 -50 -60 -70 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) S21 versus Frequency 40 30 20 0 -5 Frequency (GHz) S22 versus Frequency S21 (dB) S22 (dB) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 -10 -20 -30 -40 0.0 -10 -15 -20 -25 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) 1304 SParmLowB.0 FIGURE 3: Low Band S-Parameters (c)2006 SST Communications Corp. S71304-01-000 9/06 8 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Test Conditions: VCC = 3.3V, 54 Mbps 802.11g OFDM signal Output Power versus Input Power 21 20 19 Output Power (dBm) 18 17 16 15 14 13 12 11 10 9 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 Freq=2.412 GHz @ 25 C Freq=2.442 GHz @ 25 C Freq=2.484 GHz @ 25 C Freq=2.412 GHz @ -10 C Freq=2.442 GHz @ -10 C Freq=2.484 GHz @ -10 C Freq=2.412 GHz @ 85 C Freq=2.442 GHz @ 85 C Freq=2.484 GHz @ 85 C -9 -8 -7 -6 -5 Input Power (dBm) FIGURE 4: Low Band Output Power Versus Input Power 1304 F3.0 Power Gain Versus Output Power 40 38 36 Freq=2.412 GHz @ 25 C Freq=2.442 GHz @ 25 C Freq=2.484 GHz @ 25 C Freq=2.412 GHz @ -10 C Freq=2.442 GHz @ -10 C Freq=2.484 GHz @ -10 C Freq=2.412 GHz @ 85 C Freq=2.442 GHz @ 85 C Freq=2.484 GHz @ 85 C Power Gain (dB) 34 32 30 28 26 24 22 20 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 1304 F4.0 FIGURE 5: Low Band Power Gain versus Output Power (c)2006 SST Communications Corp. S71304-01-000 9/06 9 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Supply Current Versus Output Power 170 160 150 Freq=2.412 GHz @ 25 C Freq=2.442 GHz @ 25 C Freq=2.484 GHz @ 25 C Freq=2.412 GHz @ -10 C Freq=2.442 GHz @ -10 C Freq=2.484 GHz @ -10 C Freq=2.412 GHz @ 85 C Freq=2.442 GHz @ 85 C Freq=2.484 GHz @ 85 C Supply Current (mA) 140 130 120 110 100 90 80 70 60 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 1304 F5.0 FIGURE 6: Low Band Supply Current versus Output Power PAE versus Output Power 22 20 18 16 14 Freq=2.412 GHz @ 25 C Freq=2.442 GHz @ 25 C Freq=2.484 GHz @ 25 C Freq=2.412 GHz @ -10 C Freq=2.442 GHz @ -10 C Freq=2.484 GHz @ -10 C Freq=2.412 GHz @ 85 C Freq=2.442 GHz @ 85 C Freq=2.484 GHz @ 85 C PAE (%) 12 10 8 6 4 2 0 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 1304 F6.0 FIGURE 7: Low Band PAE versus Output Power (c)2006 SST Communications Corp. S71304-01-000 9/06 10 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications EVM versus Output Power 10 9 8 7 Freq=2.412 GHz @ 25 C Freq=2.442 GHz @ 25 C Freq=2.484 GHz @ 25 C Freq=2.412 GHz @ -10 C Freq=2.442 GHz @ -10 C Freq=2.484 GHz @ -10 C Freq=2.412 GHz @ 85 C Freq=2.442 GHz @ 85 C Freq=2.484 GHz @ 85 C EVM (%) 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 1304 F7.0 FIGURE 8: Low Band EMV Versus Output Power 10 Freq = 2.412 GHz 0 -10 -20 -30 -40 -50 -60 -70 Freq = 2.442 GHz Freq = 2.484 GHz Amplitude (dB) 2.35 2.40 2.45 2.50 2.55 1304 F8.0 Frequency (GHz) FIGURE 9: Low Band 802.11b Spectrum Mask at 22 dBm with DC Current of 220 mA (c)2006 SST Communications Corp. S71304-01-000 9/06 11 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Test Conditions: VCC = 3.3V, TA = 25C, 1 Mbps 802.11b CCK Signal 10 Freq = 2.412 GHz 0 -10 -20 Freq = 2.442 GHz Freq = 2.484 GHz Amplitude (dB) -30 -40 -50 -60 -70 -80 2.35 2.40 2.45 2.50 2.55 1304 F9.0 Frequency (GHz) FIGURE 10: Low Band 802.11b Spectrum Mask at 21.5 dBm with DC Current of 205 mA (c)2006 SST Communications Corp. S71304-01-000 9/06 12 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Low Band Power Detector characteristics Test Conditions: VCC = 3.3V, VREG_LB = 2.85V, TA = 25C, 54 Mbps 802.11g OFDM Signal Detector Voltage versus Output Power 1.4 1.3 Detector Voltage (V) 1.2 1.1 1.0 0.9 0.8 0.7 9 10 11 12 13 14 15 16 17 Freq=2.412 GHz @ 25 C Freq=2.442 GHz @ 25 C Freq=2.484 GHz @ 25 C Freq=2.412 GHz @ -10 C Freq=2.442 GHz @ -10 C Freq=2.484 GHz @ -10 C Freq=2.412 GHz @ 85 C Freq=2.442 GHz @ 85 C Freq=2.484 GHz @ 85 C 18 19 20 21 Output Power (dBm) 1304 F10.0 FIGURE 11: Low Band Detector Voltage versus output power (c)2006 SST Communications Corp. S71304-01-000 9/06 13 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Typical High Band Performance for 802.11a Test Conditions: VCC = 3.3V, TA = 25C, VREF_HB = 2.9V unless otherwise noted S11 versus Frequency 0 -5 0 -10 -20 S12 versus Frequency S11 (dB) S12 (dB) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -10 -15 -20 -25 -30 0.0 -30 -40 -50 -60 -70 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) S21 versus Frequency 40 30 20 0 -5 Frequency (GHz) S22 versus Frequency S21 (dB) S22 (dB) 10 0 -10 -20 -30 -40 0.0 -10 -15 -20 -25 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) 1304 SParmHighB.0 FIGURE 12: High Band S-Parameters (c)2006 SST Communications Corp. S71304-01-000 9/06 14 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Typical Performance characteristics for 802.11A Test Conditions: VCC = 3.3V, 54 Mbps 802.11a OFDM Signal Output Power versus Input Power 22 21 20 19 Output Power (dBm) 18 17 16 15 14 13 12 11 10 9 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 Freq=4.92 GHz @ 25 C Freq=5.18 GHz @ 25 C Freq=5.32 GHz @ 25 C Freq=5.805 GHz @ 25 C Freq=4.92 GHz @ -10 C Freq=5.18 GHz @ -10 C Freq=5.32 GHz @ -10 C Freq=5.805 GHz @ -10 C Freq=4.92 GHz @ 85 C Freq=5.18 GHz @ 85 C Freq=5.32 GHz @ 85 C Freq=5.805 GHz @ 85 C -8 -6 -4 -2 0 Input Power (dBm) 1304 F12.0 FIGURE 13: High Band Output Power Versus Input Power Power Gain versus Output Power 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 9 10 11 12 13 14 15 16 17 Power Gain (dB) Freq=4.92 GHz @ 25 C Freq=5.18 GHz @ 25 C Freq=5.32 GHz @ 25 C Freq=5.805 GHz @ 25 C Freq=4.92 GHz @ -10 C Freq=5.18 GHz @ -10 C Freq=5.32 GHz @ -10 C Freq=5.805 GHz @ -10 C Freq=4.92 GHz @ 85 C Freq=5.18 GHz @ 85 C Freq=5.32 GHz @ 85 C Freq=5.805 GHz @ 85 C 18 19 20 21 22 Output Power (dBm) 1304 F13.0 FIGURE 14: High Band Power Gain versus Output Power (c)2006 SST Communications Corp. S71304-01-000 9/06 15 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Supply Current versus Output Power 400 380 360 340 Freq=4.92 GHz @ 25 C Freq=5.18 GHz @ 25 C Freq=5.32 GHz @ 25 C Freq=5.805 GHz @ 25 C Freq=4.92 GHz @ -10 C Freq=5.18 GHz @ -10 C Freq=5.32 GHz @ -10 C Freq=5.805 GHz @ -10 C Freq=4.92 GHz @ 85 C Freq=5.18 GHz @ 85 C Freq=5.32 GHz @ 85 C Freq=5.805 GHz @ 85 C Supply Current (mA) 320 300 280 260 240 220 200 180 160 140 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1304 F14.0 FIGURE 15: High Band Supply Current Versus Output Power PAE versus Output Power 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Freq=4.92 GHz @ 25 C Freq=5.18 GHz @ 25 C Freq=5.32 GHz @ 25 C Freq=5.805 GHz @ 25 C Freq=4.92 GHz @ -10 C Freq=5.18 GHz @ -10 C Freq=5.32 GHz @ -10 C Freq=5.805 GHz @ -10 C Freq=4.92 GHz @ 85 C Freq=5.18 GHz @ 85 C Freq=5.32 GHz @ 85 C Freq=5.805 GHz @ 85 C PAE (%) Output Power (dBm) 1304 F15.0 FIGURE 16: High Band PAE versus Output Power (c)2006 SST Communications Corp. S71304-01-000 9/06 16 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications EVM versus Output Power 10 9 8 7 Freq=4.92 GHz @ 25 C Freq=5.18 GHz @ 25 C Freq=5.32 GHz @ 25 C Freq=5.805 GHz @ 25 C Freq=4.92 GHz @ -10 C Freq=5.18 GHz @ -10 C Freq=5.32 GHz @ -10 C Freq=5.805 GHz @ -10 C Freq=4.92 GHz @ 85 C Freq=5.18 GHz @ 85 C Freq=5.32 GHz @ 85 C Freq=5.805 GHz @ 85 C EVM (%) 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1304 F16.0 FIGURE 17: High Band EVM versus Output Power 10 0 -10 -20 -30 -40 -50 -60 -70 4.85 4.87 4.89 4.91 4.93 4.95 4.97 4.99 1304 F17.0 Amplitude (dB) Frequency (GHz) FIGURE 18: High Band 802.11a Spectrum Mask at 4.92 GHz at Output Power 22.5 dBm with DC Current at 410 mA (c)2006 SST Communications Corp. S71304-01-000 9/06 17 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications 10 0 -10 -20 -30 -40 -50 -60 -70 5.11 5.13 5.15 5.17 5.19 5.21 5.23 5.25 1304 F18.0 Amplitude (dB) Frequency (GHz) FIGURE 19: High Band 802.11a Spectrum Mask at 5.18 GHz at Output Power 22.5 dBm with DC Current at 380 mA 10 0 -10 -20 -30 -40 -50 -60 -70 4.85 4.87 4.89 4.91 4.93 4.95 4.97 4.99 1304 F19.0 Amplitude (dB) Frequency (GHz) FIGURE 20: High Band 802.11a Spectrum Mask at 5.32 GHz at Output Power 22.5 dBm with DC Current at 380 mA (c)2006 SST Communications Corp. S71304-01-000 9/06 18 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications 10 0 -10 -20 -30 -40 -50 -60 -70 5.11 5.13 5.15 5.17 5.19 5.21 5.23 5.25 1304 F20.0 Amplitude (dB) Frequency (GHz) FIGURE 21: High Band 802.11a Spectrum Mask at 5.805 GHz at Output Power 22 dBm with DC Current at 390 mA (c)2006 SST Communications Corp. S71304-01-000 9/06 19 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications High Band Power Detector characteristics Test Conditions: VCC = 3.3V, 54 Mbps 802.11a OFSM Signal Detector Voltage versus Output Power 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Freq=4.92 GHz @ 25 C Freq=5.18 GHz @ 25 C Freq=5.32 GHz @ 25 C Freq=5.805 GHz @ 25 C Freq=4.92 GHz @ -10 C Freq=5.18 GHz @ -10 C Freq=5.32 GHz @ -10 C Freq=5.805 GHz @ -10 C Freq=4.92 GHz @ 85 C Freq=5.18 GHz @ 85 C Freq=5.32 GHz @ 85 C Freq=5.805 GHz @ 85 C Detector Voltage (V) Output Power (dBm) 1304 F21.0 FIGURE 22: High Band Detector Voltage versus Output Power (c)2006 SST Communications Corp. S71304-01-000 9/06 20 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Vcc_LB C5 0.1uF T4 5575 C12 0.1uF Det_LB C8 10pF L2 8.2nH R1 249 Vreg_LB C1 10pF 24 1 23 22 21 20 19 T7 50 T9 50 LB Bias Circuit 18 C14 47pF RFout_LB C10 1.8pF T1 50 L1 1.5nH RFin_LB C2 1.8pF 2 3 4 T2 50 T3 50 17 16 15 T8 50 T10 50 T11 50 T12 50 RFin_HB C3 0.5pF C4 10pF R2 221 5 6 HB Bias Circuit 14 13 8 9 10 T6 5575 C11 0.8pF L3 8.2nH RFout_HB C15 C16 1pF 0.3pF 7 T5 5575 11 12 Vreg_HB Det_HB C9 10pF C13 0.1uF C6 0.1uF C7 0.1uF Vcc_HB 1304 Schematic1.1 Operating Conditions: Vreg_LB = 2.9V, Vcc_LB = 3.3 V, Vreg_HB = 2.9V, Vcc_HB = 3.3V FIGURE 23: Typical Application Circuit (c)2006 SST Communications Corp. S71304-01-000 9/06 21 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications TABLE 6: Part List Symbol C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 L1 L2 L3 R1 R2 T1,T2,T9 T3 T4 T5 T6 T7 T8 T10 T11 T12 Value 10pF 1.8pF 0.5 pF 10pF 0.1uF 0.1uF 0.1uF 10pF 10pF 1.8pF 0.8pF 0.1uF 0.1uF 47pF 0.3pF 1pF 1.5nH 8.2nH 8.2nH 249 221 50 50 55~75 55~75 55~75 50 50 50 50 50 Note Larger value can be used if meeting on/off toggling speed requirement of low ban on system board LB input matching HB input matching, no-pop if -6dB input return loss is acceptable Larger value can be used if meeting on/off toggling speed requirement for high band on system board LB bypassing HB bypassing HB bypassing LB power detector bypassing/video bandwidth control HB power detector bypassing/video bandwidth control LB band output matching, 1.5~2.0 pF determined by length/impedance of T7, high Q part preferred HB output matching, high Q cap preferred LB bypassing, position close to L2 HB bypassing, position close to L3 LB output DC blocking HB output matching, high Q cap preferred HB output matching / DC blocking LB input matching, can be replaced by an 240mil 50 microstrip LB output RF chock, coil type preferred HB output RF chock, coil type preferred Needs adjusting for different Vreg_LB Needs adjusting for different Vreg_HB or 4.9~5.9GHz simultaneous coverage with lower EVM Length not critical HB input matching, 50 (c)2006 SST Communications Corp. S71304-01-000 9/06 22 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Product Ordering Information SST13LP SSTxxLP 02 xx QD XX F X Environmental Attribute F1 = non-Pb contact (lead) finish Package Modifier D = 24 contact Package Type Q = WQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 3 = 2.4 GHz / 5 GHz Dual-Band Product Line 1 = SST Communications 1. Environmental suffix "F" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". Valid combinations for SST13LP02 SST13LP02-QDF SST13LP02 Evaluation Kits SST13LP02-QDF-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2006 SST Communications Corp. S71304-01-000 9/06 23 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications packaging diagrams TOP VIEW Pin #1 SIDE VIEW 0.2 BOTTOM VIEW See notes 2 and 3 Pin #1 4.00 0.08 0.075 2.3 2.3 0.30 0.18 0.45 0.35 0.5 BSC 4.00 0.08 0.80 0.70 0.05 Max 1mm 24-wqfn-4x4-QD-1.2 Note: 1. Complies with JEDEC JEP95 MO-220J, variant WGGD-4 except external paddle dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). FIGURE 24: 24-contact Very-very-thin-profile Quad Flat No-lead (WQFN) SST Package Code: QD TABLE 7: Revision History Revision 00 01 Description Date Nov 2005 Sep 2006 * * * * 1304: Conversion from MRD SST13LP02 Updated information for pins 3, 4, 16, and 17 in Figures 1 and 2 and Table 1. Updated Figure 23. Revised AC Electrical Characteristics for Configuration tables 3 and 5. (c)2006 SST Communications Corp. S71304-01-000 9/06 24 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications CONTACT INFORMATION Marketing SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605 Sales NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Sunny Tzeng Sales Manager 16F-6, No. 75, Sec.1, Sintai 5th Rd Sijhih City, Taipei County 22101, Taiwan, R.O.C. Tel: +886-2-8698-1168 Fax: +886-2-8698-1169 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com EUROPE Silicon Storage Technology Ltd. Ralph Thomson Applications Manager Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Kiyomi Akaba Senior Sales Manager 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: kakaba@sst.com Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2006 SST Communications Corp. S71304-01-000 9/06 25 |
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